47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are need. Towards direction we have previously demonstrated directly-modulated lasers (DMLs) 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed power consumption due the carrier-photon dynamics DMLs. work, alleviate by introducing photon–photon resonance membrane DMLs-on-Si design demonstrate device maximum 3-dB bandwidth 47.5 GHz. This denotes increase more than 2x times compared previous DMLs-on-Si. Moreover, DML is delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net rate 113.42 Gbps) over 2-km standard single-mode fiber transmission. DC energy-efficiencies 0.17 pJ/bit 25 °C 0.34 been > 100-Gbps signals. Deploying such DMLs integrated multichannel transceiver should ensure smooth towards Terabit-class Ethernet links on-board optics subsystems.